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Problem: The semiconductor gallium arsenide, GaAs, is used in highspeed integrated circuits, light-emitting diodes, and solar cells. Its density is 5.32 g/cm3. It can be made by reacting trimethylgallium, Ga(CH3)3, with arsine gas, AsH3. The other product of the reaction is methane, CH4. If you reacted 600 g of trimethylgallium with 400 g of arsine. One application of GaAs uses it as a thin film. If you take the mass of GaAs from part A and make a 40-nm thin film from it, what area, in cm2, would it cover? Recall that 1 nm = 1 x 10–9 m.

FREE Expert Solution

The balanced reaction is:

Ga(CH3)3 + AsH3 → GaAs + 3 CH4

From the reaction:

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Problem Details

The semiconductor gallium arsenide, GaAs, is used in highspeed integrated circuits, light-emitting diodes, and solar cells. Its density is 5.32 g/cm3. It can be made by reacting trimethylgallium, Ga(CH3)3, with arsine gas, AsH3. The other product of the reaction is methane, CH4. If you reacted 600 g of trimethylgallium with 400 g of arsine. 

One application of GaAs uses it as a thin film. If you take the mass of GaAs from part A and make a 40-nm thin film from it, what area, in cm2, would it cover? Recall that 1 nm = 1 x 10–9 m.

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